This paper presents an application of Iterative Learning Control (ILC) methodology to the temperature proole control of a Rapid Thermal Processing (RTP) system for single wafer processing (SWP), a trend in semiconductor manufacturing. The motivation and the basic ideas are brieey introduced. The eeectiveness of the proposed method is demonstrated by the simulation studies of a simpliied model o...

The initial growth kinetics for SiH, chemical vapor deposition of Si on SiO, at low temperature (500-600 “C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below -0.7 monolayer Si coverage, the...

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implic...

In Part II of this paper we present some elementary examples of distributed parameter system model reduction using the techniques described in Part I. In particular, we focus on using the Karhunen-Loeve expansion and Galerkin’s method to formulated reduced order models for a heat diffusion system and temperature field dynamics in a Rapid Thermal Chemical Vapor Deposition reactor. Simulation res...

A model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the e ects of spatial wafer temperature patterns and gas-phase reactant depletion on polysilicon deposition uniformity. A sequence of simulated runs is performed, varying the lamp power pro les so that di erent temperature modes are excited. The dominant spatial wafer thermal modes are extracted...