Low-temperature expansion of the effective Lagrangian of the QED3+1 with a uniform magnetic field and a finite chemical potential is performed. Temperature corrections, as well as zero-temperature expression for the effective Lagrangian are presented as finite sums over partially filled Landau levels. † E-mail address: [email protected]

We derive a simple analytical model for the eld and temperature dependence of Shockley-Read-Hall lifetimes in silicon from a microscopic level, where the capture of carriers at recombination centers is assumed to be a multiphonon process. Strong electric elds, as often present in modern devices, cause trap assisted tunneling, i.e. the multiphonon recombination path is no longer purely vertical ...

We present a scheme to reconstruct the quantum state of a field prepared inside a lossy cavity at finite temperature. Quantum coherences are normally destroyed by the interaction with an environment, but we show that it is possible to recover complete information about the initial state (before interaction with its environment), making possible to reconstruct any s-parametrized quasiprobability...

We present a versatile high voltage sample stick that fits into all cryomagnets and standard cryostats at the Swiss Spallation Neutron Source, Paul Scherrer Institut, and which provides a low effort route to neutron scattering experiments that combine electric field with low temperature and magnetic field. The stick allows for voltages up to 5 kV and can be easily adapted for different scatteri...

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low tem...

A d-wave superconductor with isolated strong non-magnetic impurities should exhibit an upturn in the penetration depth at low temperatures [1]. Here we calculate how an external magnetic field supresses this effect.