نتایج جستجو برای: suit etching depth

تعداد نتایج: 179050  

2005
Xiaoying Shan James J. Watkins

Cuprous oxide films (Cu2O) supported on Cu or on SiO2 were etched using solutions of h-diketones including 1,1,1,5,5,5hexafluoroacetylacetone, 2,2,6,6-tetramethyl-3,5-heptanedione and 2,2,7-trimethyl-3,5-octanedione (TMOD) in supercritical carbon dioxide at temperatures between 80 and 150 -C and pressures between 20 and 27.5 MPa. The films and etched substrates were analyzed by X-ray photoelect...

2015
Prem Pal Kazuo Sato

Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to...

2003
M. Puech N. Launay N. Arnal P. Godinat JM. Gruffat

This paper presents two recent developments in deep silicon etching for MEMS applications using an Alcatel ICP deep dry etching system. In the first part of the paper, a new technique for doubling the state-of-the-art Trench Aspect Ratio from 30 to 60 is introduced. Results are presented showing submicron 0.4 μm wide trenches etched to a depth of 24 μm. In the second part, a new method for dry ...

2005
Weidong Jin

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

2015
Christian Heyn Thorben Bartsch Stefano Sanguinetti David Jesson Wolfgang Hansen

Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms ...

Journal: :Dental materials journal 2008
Masahiro Iijima Shuichi Ito Toshihiro Yuasa Takeshi Muguruma Takashi Saito Itaru Mizoguchi

This study sought to assess the efficacy of two self-etching primer systems (Transbond Plus and Beauty Ortho Bond) on orthodontic brackets. Therefore, shear bond strengths and bracket-adhesive failure modes (ARI scores) were determined and compared against an etch-and-rinse adhesive system (Transbond XT) under two experimental conditions (dry and saliva application). Shear bond strength test wa...

2010
Ali Farahanchi Arthur C. Smith Ajay Somani Xiaolin Xie Hong Cai Nigel Drego Karthik Balakrishnan Daihyun Lim Daniel Truque Albert Chang Wei Fan Joy Johnson Zhipeng Li

A quantitative model capturing pattern dependent effects and time evolution of the etch rate in Deep Reactive Ion Etching (DRIE) is presented. DRIE is a key process for pattern formation in semiconductor fabrication. Non-uniformities are caused due to microloading and aspect ratio dependencies. The etch rate varies over time and lateral etch consumes some of the etching species. This thesis con...

Journal: :International Journal of New Technology and Research 2019

Journal: :Revue d’histoire de l’enfance « irrégulière » 2012

Journal: :Mechanical Engineering 2017

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