Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

Sub-threshold operation has proven beneficial for energy-constrained systems, as it enables minimum energy consumption in logic circuits during active computation [1], and reduces leakage current in components that must be constantly powered. Previous sub-Vt research, for example a 0.13gm processor with an 8b ALU and 2Kb SRAM [2], has demonstrated substantial energy savincgs. However, process s...

due to the high density and the low consumption power in the digital integrated circuits, mostly technology of cmos is used. during the past times, the metal oxide silicon field effect transistors (mosfet) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. b...

Sub-threshold operation has proven beneficial for energy-constrained systems, as it enables minimum energy consumption in logic circuits during active computation [1], and reduces leakage current in components that must be constantly powered. Previous sub-Vt research, for example a 0.13μm processor with an 8b ALU and 2Kb SRAM [2], has demonstrated substantial energy savings. However, process sc...

A novel electrostatic discharge (ESD) protection device with a threshold voltage of 0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an ...

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

As process technology shrinks, the adaptive leakage power compensation scheme will become more important in realizing high-performance and low-power applications. In order to minimize total active power consumption in digital circuits, one must take into account sub-threshold leakage currents that grow exponentially as technology scales. This describes to predict how dynamic power and sub-thres...

Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased thr...