0016-2361/$ see front matter 2012 Elsevier Ltd. A doi:10.1016/j.fuel.2012.01.042 ⇑ Tel.: +90 262 3032285; fax: +90 262 3032203. E-mail address: [email protected] Homogeneous charge compression ignition (HCCI) combustion mode has some benefits compared to the most popular conventional combustion forms used in the internal combustion (IC) engines: spark ignition (SI) and compression igni...

Silicon On Insulator (SOI) can leverage a lot of new advantages for circuit designers compared to conventional bulk technology. In particular, the improved S-factor and reduced junction capacitance make it very appealing for next generation low power, high performance DRAM systems. However, the benefits of the SOI technology do not come entirely for free. In this project, we characterized the k...

This letter investigates hot-carrier-induced degradation on 0.1 m partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI device...

Abstarct The work presents the newly deploying technology in semiconductor industry called silicon on insulator (SOI). Its two technology partially and fully depleted SOI and describe how these are different from conventional bulk MOS technology, advantages over bulk technology and floating body effect of PD/FD SOI technology, factors effecting floating body such as kink effects in PD SOI, para...

This paper analyze the soft error tolerance related to layout structures on 65-nm bulk and SOI processes. The layout structure in which well contacts are placed between redundant latches suppresses MCU effectively. Also the tolerance of SOI structure transistor is estimated by TCAD simulations. The charge collection mechanism is suppressed by the BOX (Buried Oxide) in SOI transistor. Charge sha...

Studies over the past decade have clearly shown that s.c. implant of primary and cultured tumor cells rarely leads to the occurrence of metastatic disease. Orthotopic transplantation of cell suspensions, surgical orthotopic implantation (SOI) of cancer tissue fragments resulted in metastases in many cancer types reaching 100% successful rate. We compared two metastatic models - heterotopic mode...

The fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is the first model for circuit simulation based on a complete surface-potential description. HiSIM-SOI solves the surface potentials at all three SOI-surfaces perpendicular to the channel surface self-consistently. Besides verification against measured I-V characteristics, HiSIM-SOI is also verified with a 1/f noise analysis, ...

The silicon-on-insulator (SOI) material system is today widely recognized as one of the most important platforms for the development of photonic components. This is mainly due to the fact that the mass fabrication techniques of the CMOS technology can be used for the fabrication of these SOI components. However, using silicon for photonic components has significant downsides. For example, it is...