نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

In this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which self-consistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that chan...

Journal: :Science 1996
Likharev Korotkov

The energy dissipation in a proposed digital device in which discrete degrees of freedom are used to represent digital information (a "single-electron parametron") was analyzed. If the switching speed is not too high, the device may operate reversibly (adiabatically), and the energy dissipation ℰ per bit may be much less than the thermal energy scale kBT (where kB is Boltzmann's constant a...

2007
Tatsuya Nakamura Yuji Abe Seiya Kasai Hideki Hasegawa Tamotsu Hashizume

Abstract. A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and st...

2009
Souvik Sarkar Anup Kumar Biswas Ankush Ghosh Subir Kumar Sarkar

Low power consumption, high operating speed and high integration density equipment(s) are financially indispensable in modern Electronics. Single Electron Device (SED) is one such equipment. Single Electron Devices are capable of controlling the transport of only an electron. A single electron is sufficient to store information in the SED. This paper presents the approach for designing multipli...

2004
Shu-Fen Hu Chin-Lung Sung Yue-Min Wan

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current sIdd of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be c...

Journal: :International Journal of Computer and Communication Technology 2010

2009
J. F. Schneiderman P. Delsing

We have fabricated and characterized a new type of electrometer that couples two parallel single-electron transistors (SETs) to a radio-frequency tank circuit for use as a differential RF-SET. We demonstrate operation of this device in summing, differential, and single-SET operation modes, and use it to measure a Coulomb staircase from a differential single Cooper-pair box. In differential mode...

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

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