Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(...

Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO2) system have been studied based on the Ge content of co-sputtered Ge-SiO2 films using transmission electron microscopy (TEM) and Xray photoelectron spectroscopy (XPS). It was found that when the proportion of Ge relative to Ge oxide is 20%, TEM showed that annealing the samples at 800C for 60 min resulted in...

The lifetime of Er3+ in silicon-rich silicon oxide has been reported with quite widely varying values ranging from 9 ms to 2 ms. In this work, we consider the direct impact of silicon nanoclusters on the erbium radiative lifetime, and show that it is a function of the silicon nanocluster size, and also the erbium proximity to the nanocluster.

Single molecule tracer diffusion studies of evaporating (thinning) ultrathin tetrakis-2-ethyl-hexoxysilane (TEHOS) films on silicon with 100 nm thermal oxide reveal a considerable slowdown of the molecular mobility within less than 4 nm above the substrate (corresponding to a few molecular TEHOS layers). This is related to restricted mobility and structure formation of the liquid in this region...

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integra...

The work is devoted to the creation of a sensor structure based on porous silicon membrane. under study integrates layer used as gas transport and sensitive non-stoichiometric tin oxide. paper investigates morphology shows permeability membrane silicon. sensitivity test obtained by passing gas-air mixture containing NO 2 has been studied. Keywords: silicon, membrane, oxide, thin films, resistiv...