The adhesion of small silicon chips to cells has many potential applications as direct interconnection of the cells to the external world can be accomplished. Hence, although some typical applications of silicon nanowires integrated into microsystems are focused on achieving a cell-on-a-chip strategy, we are interested in obtaining chip-on-a-cell systems. This paper reports the design, technolo...

In this project work Si nanowires were fabricated on the Si substrate by aqueous method. In this aquoues method Ag is used for electroless chemical etching. The precursors those were taken are AgNO3, HF and H2O2. Si nanowires are fabricated at 550C. The samples were characterized by X-ray diffraction and scanning electron microscope. Result shows morphology of the Si nanowires by scanning elect...

Citation: Ali I, Tippabhotla SK, Radchenko I, Al-Obeidi A, Stan CV, Tamura N and Budiman AS (2018) Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction. Front. Energy Res. 6:19. doi: 10.3389/fenrg.2018.00019 Probing stress states in silicon nanowires During electrochemical lithiation Using In Situ synchrotron X-ray Microdi...

We demonstrate a single-step, laser-based technique to fabricate silicon nanowire field effect transistors. Boron-doped silicon nanowires are synthesized using a laser-direct-write chemical vapor deposition process, which can produce nanowires as small as 60 nm, far below the diffraction limit of the laser wavelength of 395 nm. In addition, the method has the advantages of in situ doping, catal...

Nanowires have large surface areas that create new challenges for their optoelectronic applications. Lithographic processes involved in device fabrication and substrate interfaces can lead to surface defects and substantially reduce charge carrier lifetimes and diffusion lengths. Here, we show that using a bridging method to suspend pristine nanowires allows for circumventing detrimental fabric...

pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at...

We report low-temperature electrical transport studies of chemically synthesized, molecular-scale silicon nanowires. Individual nanowires exhibit Coulomb blockade oscillations characteristic of charge addition to a single nanostructure on length scales up to at least 400 nm. Studies also demonstrate coherent charge transport through discrete single particle quantum levels extending across whole...

The Young's modulus and fracture strength of silicon nanowires with diameters between 15 and 60 nm and lengths between 1.5 and 4.3 mum were measured. The nanowires, grown by the vapor-liquid-solid process, were subjected to tensile tests in situ inside a scanning electron microscope. The Young's modulus decreased while the fracture strength increased up to 12.2 GPa, as the nanowire diameter dec...

A new method for growing silicon nanowires was presented. They were grown in an aqueous solution at a temperature of 85 oC under atmospheric pressure by using sodium methylsiliconate as a water‐soluble silicon precursor. The structure, morphology, and composition of the as‐grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and en...

Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded...