Silicon carbide (SiC) is a particularly interesting species of presolar grain because it is known to form on the order of a hundred different polytypes in the laboratory, and the formation of a particular polytype is sensitive to growth conditions. Astronomical evidence for the formation of SiC in expanding circumstellar atmospheres of asymptotic giant branch (AGB) carbon stars is provided by i...

P ower electronics fabricated on the Silicon Carbide (SiC) platform can operate at higher temperatures, higher frequencies, and can delive higher circuit efficiencies as compared to traditional Si-based technologies [1]. The SiC transistors are especially attractive at 1.2 kV-10 kV ratings, particularly for medium and high-frequency applications [2]. Though SiC-based Schottky diodes were readil...

We present here the first infrared spectra of meteoritic SiC grains. The mid-infrared transmission spectra of meteoritic SiC grains isolated from the Murchison meteorite were measured in the wavelength range 2.5–16.5 μm, in order to make available the optical properties of presolar SiC grains. These grains are most likely stellar condensates with an origin predominately in carbon stars. Measure...

The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...

In this paper, we propose a successive interference cancellation (SIC) detector which utilises multiple feedback (MF) candidates for cancellation stages and a dynamic log-likelihoodratio (LLR)-based dynamic reliability ordering (RO) of the cancellation stages in a multiple-input multiple-output (MIMO) system. The proposed multi-feedback reliability-ordered SIC (MF-RO-SIC) detector’s performance...

Atomistic mechanisms of nanoindentation of a-SiC have been studied by molecular dynamics simulations. The load displacement curve exhibits a series of load drops, reflecting the short-range topological order similar to crystalline 3C–SiC. In contrast to 3C–SiC, the load drops are irregularly spaced and less pronounced. The damage is spatially more extended than in 3C–SiC, and it exhibits long-r...