نتایج جستجو برای: si3n4

تعداد نتایج: 1511  

2017
Giuseppe Pezzotti Elia Marin Tetsuya Adachi Alfredo Rondinella Francesco Boschetto Wenliang Zhu Nobuhiko Sugano Ryan M. Bock Bryan McEntire Sonny B. Bal

While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant's surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies o...

در این پژوهش، چهار نمونه سرامیکی فوق دما بالای پایه دی‌بورید تیتانیم یعنی نمونه‌های بدون افزودنی، دارای نیترید سیلیسیم (5 درصد وزنی)، دارای کاربید سیلیسیم (20 درصد حجمی) و دارای هر دو افزودنی نیترید و کاربید سیلیسیم به روش تفجوشی پلاسمای جرقه‌ای (SPS) در دمای 1900 درجه سانتی‌گراد به مدت 7 دقیقه با فشار 40 مگاپاسکال ساخته شد. ریزساختار کامپوزیت‌های پایه TiB2 به خاطر افزودن SiC و Si3N4 تحت تاثیر ...

2015
Haitao Liu Zhaohui Huang Juntong Huang Minghao Fang Yan-gai Liu Xiaowen Wu Xiaozhi Hu Shaowei Zhang

Ultra-long, single crystal, α-Si3N4 nanowires sheathed with amorphous silicon oxide were synthesised by an improved, simplified solid-liquid-solid (SLS) method at 1150 °C without using flowing gases (N2, CH4, Ar, NH3, etc.). Phases, chemical composition, and structural characterisation using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron micr...

Journal: :Journal of applied biomaterials & biomechanics : JABB 2010
Francesco Bucciotti Mauro Mazzocchi Alida Bellosi

PURPOSE In this work we investigated the suitability of electroconductive silicon nitride/titanium nitride composite for biomedical implantable devices with particular attention on the processing route that allows the net-shaping of complex components by electrical discharge machining (EDM). METHODS The composite, constituted mainly of a beta-Si3N4, dispersed TiN grains and a glassy grain bou...

2017
Norimasa Nishiyama Ryo Ishikawa Hiroaki Ohfuji Hauke Marquardt Alexander Kurnosov Takashi Taniguchi Byung-Nam Kim Hidehiro Yoshida Atsunobu Masuno Jozef Bednarcik Eleonora Kulik Yuichi Ikuhara Fumihiro Wakai Tetsuo Irifune

Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl...

2015
Itaru Yanagi Takeshi Ishida Koji Fujisaki Ken-ichi Takeda

To improve the spatial resolution of solid-state nanopores, thinning the membrane is a very important issue. The most commonly used membrane material for solid-state nanopores is silicon nitride (Si3N4). However, until now, stable wafer-scale fabrication of Si3N4 membranes with a thickness of less than 5 nm has not been reported, although a further reduction in thickness is desired to improve s...

Journal: :Ceramics 2022

In this paper, partial transient liquid phase (PTLP) diffusion bonding between Si3N4 ceramics and Ht250 cast iron was carried out by using an Ti/Cu/Kovar/Cu/Ti interlayer. The effects of the heating temperature holding time on microstructure, formation mechanism, mechanical properties Si3N4/Ht250 joints were studied. results show that maximum shear strength joint is 112 MPa when welding 1000 °C...

2011
Subhra Dhar Manisha Pattanaik Hsing-Huang Tseng Thomas Skotnicki P. Rajaram Chenming Hu Ibrahim Ahmad Fazrena Azlee Hamid Azami Zaharim

Gate-leakage reduction is the key motivation for the replacement of SiO2 with alternative gate dielectrics. 45nm gate length scaled grooved and bulk nMOSFETs are evaluated to bring out the most compatible and power saving dielectric option using Si3N4 and SiO2 using Silvaco ATLAS device simulator. At the scaled thickness, SiO2 controls the leakage better than Si3N4, whereas at increased thickne...

2002
Gautam Gundiah

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain b-SiC nanowires involves heating silica gel with activated carbon at 1360 uC in H2 or NH3. The same reaction, if carried out in the p...

2011
Jiro Yota

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

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