An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may fi...

The computer simulation of realistic radiographs has been proved to be an efficient tool for the design of X-ray systems, the specification of their components, the development of dedicated image processing methods and the final validation. Sindbad software has been developed at LDET laboratory for that purpose. The goal of this paper is to describe new developments of Sindbad allowing taking i...

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structu...

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) a...

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

The subject of radiation damage to silicon detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the ...

Cryogenic detectors operated at temperatures below 1 K offer an order of magnitude higher energy resolution than conventional semiconductor-based energy-dispersive detectors, and orders of magnitude higher efficiency that grating spectrometers. Initially developed for astrophysics applications, these detectors are increasingly used in synchrotron-based research, both for detector characterizati...

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth’s energy budget from space. During the first year of this effort we have de...

Recent technological developments and new topology designs have made semiconductor drift detectors ideal devices for high-resolution x-ray spectrometry. In this paper the basic topology of a semiconductor drift detector with on-chip electronics specially designed for x-ray spectrometry is reviewed. These devices have been used for the first time in x-ray and g-ray spectroscopy applications. In ...