نتایج جستجو برای: semiconductor detector

تعداد نتایج: 117688  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - دانشکده علوم 1387

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

2016
Yasuyuki Takahashi Hayato Ishimura

Quantitative measurement of myocardium perfusion is possible with single photon emission computed tomography (SPECT) using a semiconductor detector. However, accumulation of 99mTc-tetrofosmin in the liver may make it difficult to assess that accurately in the inferior myocardium. Our idea is to reduce the high accumulation in the liver by using dynamic SPECT imaging and a technique called time ...

2000
G. C. Giakos S. Chowdhury F. Russo N. Shah

In this study, novel dual-energy detection modes for digital mammography, consisting of a combination of gas detector media with semiconductor detectors, are presented and discussed. The purpose of this study is to measure experimentally the figure of merit (FOM) of this multimedia detector for dual-energy imaging. The experimental results indicate that the multimedia detector exhibits a high F...

Journal: :Biomedical Journal of Scientific & Technical Research 2020

2007
Y. Nakamura K. Hara K. Nakamura K. Inoue S. Shinma Y. Ikegami T. Kohriki S. Terada Y. Unno

We observe deteriorated IV, leakage-to-voltage, characteristics when the ATLAS SemiConductor Tracker (SCT) silicon microstrip detector is biased at a fixed voltage Vk for a long period. The leakage current is nearly halved at voltages below Vk. The noise figure is deteriorated and signal charge spreads to neighboring strips. The detector performance is, however, not degraded when biased at or a...

2012
Fausto Franceschini Frank H. Ruddy

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...

Journal: :IJCCE 2013
Punchithaya K. Sripathi K. M. Balakrishna

K-shell fluorescence yields of low, medium Z and rare earth elements were determined using Si(PIN) detector and HPGe detector employing reflection geometry set up. Target atoms were excited using 59.5 keV gamma rays emerging from Am-241 source of strength 300 mCi. Background radiation and multiple scattering effects were minimized by properly shielding the detector. The elemental foils of unifo...

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