نتایج جستجو برای: semiconducting silicon

تعداد نتایج: 86286  

2015
JASON G. SLINGSBY NICHOLAS A. RORRER LAKSHMI KRISHNA ERIC S. TOBERER CAROLYN A. KOH MARK MAUPIN

Sodium Diffusion in Type II Silicon Clathrates, JASON G. SLINGSBY, NICHOLAS A. RORRER, LAKSHMI KRISHNA, ERIC S. TOBERER, CAROLYN A. KOH, and C. MARK MAUPIN (Chemical and Biological Engineering Department, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401; Physics Department, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401; [email protected]). Earth abundant semi...

Journal: :Nano letters 2014
Xiaojun Qin Fei Peng Feng Yang Xiaohui He Huixin Huang Da Luo Juan Yang Sheng Wang Haichao Liu Lianmao Peng Yan Li

The growth of semiconducting single-walled carbon nanotubes (s-SWNTs) on flat substrates is essential for the application of SWNTs in electronic and optoelectronic devices. We developed a flexible strategy to selectively grow s-SWNTs on silicon substrates using a ceria-supported iron or cobalt catalysts. Ceria, which stores active oxygen, plays a crucial role in the selective growth process by ...

Journal: :ACS nano 2008
Zhong Lin Wang

Zinc oxide is a unique material that exhibits exceptional semiconducting, piezoelectric, and pyroelectric properties. Nanostructures of ZnO are equally as important as carbon nanotubes and silicon nanowires for nanotechnology and have great potential applications in nanoelectronics, optoelectronics, sensors, field emission, light-emitting diodes, photocatalysis, nanogenerators, and nanopiezotro...

Journal: :Physical review letters 2005
A Sergeev M Yu Reizer V Mitin

We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron scattering from impurities and defects. We have found that in contrast with the destructive interference in metals, which results in the Pippard ineffective...

2011
Corsin Battaglia Eike Fabian Schwier Claude Monney Clément Didiot Nicolas Mariotti Katalin Gaál-Nagy Giovanni Onida Michael Gunnar Garnier Philipp Aebi

Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12× 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating se...

2016
Sofia Paulo Emilio Palomares Eugenia Martinez-Ferrero

Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV). Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized ...

2000
Jing Kong Chongwu Zhou Erhan Yenilmez Hongjie Dai

A 0.4 mm long semiconducting single-walled carbon nanotube is doped into n type by potassium ~K! vapor. Electrical measurements of the doped nanotube reveal single-electron charging at temperatures up to 160 K. The K-doped sample manifests as a single quantum dot or multiple quantum dots in series depending on the range of applied gate voltage. This is explained by an inhomogeneous doping profi...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2011
Corsin Battaglia Eike Fabian Schwier Claude Monney Clément Didiot Nicolas Mariotti Katalin Gaál-Nagy Giovanni Onida Michael Gunnar Garnier Philipp Aebi

Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating s...

2015
Andrew J Stapleton Soniya D Yambem Ashley H Johns Rakesh A Afre Amanda V Ellis Joe G Shapter Gunther G Andersson Jamie S Quinton Paul L Burn Paul Meredith David A Lewis

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω-1 i...

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