Currently available semiconductor lasers for spectroscopy in the near- and mid-infrared region based on direct band-to-band transitions as gallium-arsenide, indium-phosphide, antimonides and lead-salt containing compounds will be discussed together with the main features of different tunable diode-laser absorption spectrometers for trace gas analysis. Measurements of atmospheric carbon dioxide ...

Transparent electronics has attracted numerous research efforts in recent years because of its promising commercial impact in a wide variety of areas such as transparent displays. High optical transparency as well as good electrical performance is required for transparent electronics. Preseparated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose due to their e...

Nano sized indium oxide is found to be an efficient catalyst for the conversion of thiols to sulfides using Na2CO3 as base and TBATB as reagent in DMSO at 110 °C. Here in situ generation of bromo intermediate by TBATB takes place through indium surface. A variety of aryl sulfides can be synthesized in excellent yields from less reactive chlorides, boronic acids and thiols.

Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this ...

We report the optoelectronic properties occurring in single-walled carbon nanotubes ~SWNTs!— conjugated polymer, poly~3-octylthiophene! composites. Composite films were drop or spin cast from a solution on indium–tin oxide ~ITO! and quartz substrates and studied using absorption spectroscopy and electrical characterization methods. Diodes ~Al/polymer-nanotube composite/ ITO! with a low nanotube...

We employ high-temperature ab initio molecular dynamics (AIMD) as a sampling approach to discover low-energy, semiconducting, indium phosphide nanostructures. Starting from under-coordinated models of InP (e.g. a single layer of InP(111)), rapid rearrangement into a stabilized, higher-coordinate but amorphous cluster is observed across the size range considered (In3P3 to In22P22). These cluster...

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the reported, with electron mobilities ~100 cm2/V·s achieved room temperature, values reaching 155 a heterostructure including polycrystalline InAs film. ...

Semiconducting polymers have previously been used as the transduction material in X-ray dosimeters, but these devices have a rather low detection sensitivity because of the low X-ray attenuation efficiency of the organic active layer. Here, we demonstrate a way to overcome this limitation through the introduction of high density nanoparticles having a high atomic number (Z) to increase the X-ra...

Semiconducting bismuth sulfide (Bi2S3) nanoplates with unique highly oriented {001} surfaces were prepared on a large scale using a novel organic precursor Bi(DTCA)3 (DTCA = carbazole-9-carbodithioic acid). The as-prepared Bi2S3 nanoplates were dispersed in dimethyl sulfoxide (DMSO) and spin-coated onto an indium tin oxide (ITO) coated glass substrate. With a simple ITO/Bi2S3/Al stacked structu...

A new amphiphilic hemicyanine dye, (E)-1,3,3-trimethyl-2-[2-(4-N-methylN-hexadecylaminophenyl)ethenyl]indolinium iodide (MHID) has been synthesized and successfully transferred onto a semiconducting transparent indium-tin oxide (ITO) electrode by Langmuir–Blodgett (LB) techniques. The photoelectric conversion properties of the dye MHID monolayer fabricated ITO electrode have been investigated i...