The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semicon...

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducti...

Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect-to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its structural analogue MoS2. Here we report the direct fabrication of highly crystalline few-layer WS2 on silver substr...

Solution processibility is a unique advantage of organic semiconductors, permitting the low-cost production of flexible electronics under ambient conditions. However, the solution affinity to substrate surfaces remains a serious dilemma; liquid manipulation is more difficult on highly hydrophobic surfaces, but the use of such surfaces is indispensable for improving device characteristics. Here ...

The oxide film (TiO(2)) was formed on Nitinol potentiostatically in an acetic acid solution. Deep understanding of electronic properties of this film is needed to predict long-term corrosion properties of Nitinol implant material in simulated body fluid conditions. The capacitance measurements were performed under depletion conditions to study electronic (semiconducting) properties. The space c...

This paper reports a mechanically flexible, transparent thin film transistor that uses graphene as a conducting electrode and single-walled carbon nanotubes (SWNTs) as a semiconducting channel. These SWNTs and graphene films were printed on flexible plastic substrates using a printing method. The resulting devices exhibited a mobility of ∼ 2 cm(2) V(-1) s -1), On/Off ratio of ∼ 10(2), transmitt...

This Review discusses nanoskiving--a simple and inexpensive method of nanofabrication, which minimizes requirements for access to cleanrooms and associated facilities, and which makes it possible to fabricate nanostructures from materials, and of geometries, to which more familiar methods of nanofabrication are not applicable. Nanoskiving requires three steps: 1) deposition of a metallic, semic...

l Precise control over the electronic properties of the carbon nanotubes is key to their practical application in plastic electronics. In the present work, we have extended carbon nanotube functionalization via a 2-2 cycloaddition to electron withdrawing non-fluorinated olefins as well. Our results show that this is a fairly general approach, independent of specifics of the adderid, to converti...

Langmuir-Blodgett deposition has been used to form thin film networks of both metallic and semiconducting single-walled carbon nanotubes. These have been investigated to understand their physical, optical, and morphological properties. The electrical conductivities over the temperature range 80-350 K and across electrode gaps of 220 nm and 2 mm have been explored. In the case of semiconducting ...