make GaN a superior material to Si and GaAs for the hightemperature high-power electronic devices, ultrahigh power switches, and microwave-power sources. [ 3 ] However, self-heating limits the performance of GaN devices and further development of GaN technology. [ 4 , 5 ] The temperature rise in high-power AlGaN/GaN heterostructure fi eld-effect transistors (HFETs), which is currently on order ...

Abstract The excellent scalability of the vertical channel Field Effect Diode (FED) type 1T-DRAM including Self-Heating Effect (SHE) is presented for the first time. The vertical channel FED type shows the excellent hold characteristics (100msec at 358K) even when silicon pillar diameter is scaled down to 12nm. Moreover, we also show that by employing the vertical FED type, increase of lattice ...

In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide l...

The GaN materials system has established itself as being very important for the next generation of high-power density devices for optical, microwave, and radar applications [1] [2] [3] [4] [5]. At the same time, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimi...

Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental wo...

Experimental investigations carried out in the ASDEX Upgrade tokamak under various conditions demonstrate that the ion heat flux at the plasma edge plays a key role in the L-H transition physics, while the electron heat flux does not seem to play any role. This is due to the fact that the ion heat flux governs the radial electric field well induced by the main ions which is responsible for the ...

We present a new constraint on the amount of dust in the intergalactic medium (IGM) at high redshift. We derive the thermal history of the IGM by taking account of the photoelectric heating by dust grains, and compare it with the thermal history suggested by observations of Lyman α forests. As a result, if the IGM grain size is & 100 Å, the dust-gas mass ratio of the IGM at z & 2 is . 1/100 Gal...

As technology scales, increasing clock rates, decreasing interconnect pitch and the introduction of low-k dielectrics have made self-heating of the global interconnects an important issue in VLSI design. Further, high bus temperatures have had a negative impact on the delay and reliability of on-chip interconnects. Energy and thermal models are used to characterise the effects of self-heating o...