This paper presents a high-performance low-ringing ultra-wideband monocycle picosecond pulse generator, formed using a step recovery diode (SRD), simulated in ADS software and generated through experimentation. The pulse generator comprises three parts, a step recovery diode, a field-effect transistor and a Schottky diode, used to eliminate the positive and negative ringing of pulse. Simulated ...

This article studies the sub-linearity of output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that not due to forward-biased Schottky diode at drain contact interface but bias impact on source-side Schottky-barrier, resulting an increased carrier injection increasing drain–source voltage. The simula...

Entomologists today are interested in investigating low flying pest insects for determining significance and causes of long range migration, population dynamics and role played by landscape in dispersal and survival of these insects. One of the widest used techniques today for monitoring smaller, low flying insects is using harmonic radars and transponders [1] collectively called harmonic track...

A radar transceiver operating at 1.56 THz has recently been developed to obtain coherent, fully polarimetric W-band (98 GHz) RCS images of 1:16 scale model targets. The associated optical system operates by scanning a small focused beam of sweptfrequency radiation across a scale model target to resolve individual scattering centers and obtain the scaled RCS values for the centers. Output from a...

Measurements of the frequency stability of a far-infrared molecular laser have been made by mixing the harmonic of an ultrastable microwave source with a portion of the laser output signal in a terahertz (THz) Schottky diode balanced mixer. A 3 GHz difference-frequency signal was used in a frequency discriminator circuit to lock the laser to the microwave source. Comparisons of the short- and l...

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

The current-voltage (J-V) characteristics of ZnO/PbS quantum dot (QD) solar cells show a QD size-dependent behavior resulting from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between the ZnO and PbS QD layers. We study a QD size-dependent roll-over effect that refers to the saturation of photocurrent in forward bias and crossover effect which o...