Recent advances in thin-film crystal-g:rowth techniques such as molecular-beam epitaxy (MBE) have enabled the fabrication of quantum-well devices, which consist of alternating layers of various crystalline solid materials so thin that the materials' combined quantum-mechanical properties override their individual bulk properties. By using MBE, we constructed a number of quantum-well devices tha...

We present a parallel algorithm for Monte Carlo simulation of molecular beam epitazial growth (MBE) focusing on the software we have developed and the ezperiences gained. An eficient sequential method to do MBE simulation was developed that uses a single binary tree t o store the rates of occwence of all possible events at a given time. The challenge was to find a ioay to adapt this method to a...

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown ...

Eu:CaF2 layers have been grown epitaxially on Si using molecular beam epitaxy ~MBE! with the intent of realizing an electrically pumped optical source on Si. Here we present an atomic force microscopy study of the morphological features of MBE-grown Eu:CaF2 on p-type Si~100! substrates and a study of electroluminescence ~EL! from EL devices fabricated from these layers. The surface morphologies...

In this article kinetic Monte Carlo simulations for molecular beam epitaxy (MBE) and pulsed laser depositon (PLD) are compared. It will be shown that an optimal pattern conservation during MBE is achieved for a specific ratio of diffusion to deposition rate. Further on pulsed laser deposition is presented as an alternative way to control layer by layer growth. First results concerning the islan...

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alig...

Because of the ongoing success of Molecular Biology and Evolution (MBE), whose revenue continues to increase , the society remains in outstanding financial health. Society membership increased during FY 2010: membership-only subscriptions increased from 264 in 2009 to 541 in 2010, while society membership + journal subscriptions increased from 308 in 2009 to 334 in 2010. The society used its in...

An attempt was made to achieve high-performance 1.55I m semiconductor laser diodes based on the InGaAlAs material system with solid-source molecular beam epitaxy (MBE) technology. The primary motivation for this attempt was the possibility for enhanced QW laser performance with large conduction band offsets provided by InGaAlAs which, furthermore, can be realized with toxic-gas-free solid-sourc...