The work described in this paper is performed to estimate the influence of statistical process variations and transistor mismatch that occurs in fabrication and affect floating-gate digital circuits. These effects will affect and reduce “yield” (percentage of fully functional circuits). Monte Carlo simulations have been performed in a 90 nm to estimate the yield for manufactured floating-gate c...

We present a programmable continuous-time floating-gate Fourier processor that decomposes the incoming signal into frequency bands by analog bandpass filters, multiplies each channel by a nonvolitile weight, and then recombines the frequency channels. A digital signal processor would take a similar approach of computing a fast Fourier transform (FFT), multiplying the frequency components by a w...

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated alumini...

Abstract-Low-voltage and low-power circuit structures are substantive for almost all mobile electronic gadgets which generally have mixed mode circuit structures embedded with analog sub-sections. Using the reconfigurable logic of multiinput floating gate MOSFETs, 4-bit full adder has been designed for 1.8V operation. Multi-input floating gate (MIFG) transistors have been anticipating in realiz...

Floating-gate (FG) transistors serve as attractive media for non-volatile storage of analog parameters. However, conventional FG current memories when used for storing sub-threshold currents are sensitive to variations in temperature which limit their applications to controlled environments. In this paper, we propose a temperature compensated, high-density array of FG current memories that can ...

Abstract The idea of resistive switching devices is originally based on the fact that application electric fields changes atomic structure locally and thus also electronic material. This leads globally to a sustained change in resistance material layer, which generally referred as switching. In devices, these reconfigurations are reversible allow state be maintained for long time, why memristiv...

The transient process of the programming and erasing is very important for a nanocrystalfloating-gate flash memory. In this work, a computer simulation was carried out to investigate the charging, retention and erasing processes of our proposed Ge/Si hetero-nanocrystal floating gate flash memory. The transient gate current, the transient drain current and the average charge in one dot were simu...