In this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-perform...

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O ba...

The dynamic properties of distributed feedback lasers (DFBs) based on InAs/InGaAs quantum dots (QDs) are studied. The response function of QD DFBs under external modulation is measured, and the gain compression with photon density is identified to be the limiting factor of the modulation bandwidth. The enhancement of the gain compression by the gain saturation with the carrier density in QDs is...

We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the o...

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) subst...

We report on the significantly improved linewidth enhancement factor (?H-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without doping. It is found that ?H-factors for ground-state and first excited-state at their gain peak positions Si-doped QD are 1.48 0.63 while those undoped 2.07 1.07, greatly decreasing about 28.5...

We explore the accessible wavelength range offered by InP/AlGaInP quantum dots (QD)s grown by metal–organic vapour phase epitaxy and explain how changes in growth temperature and wafer design can be used to influence the transition energy of the dot states and improve the performance of edge-emitting lasers. The self assembly growth method of these structures creates a multi-modal distribution ...

Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated devices grown on planar substrates last few years. Recently, electrically pumped QD lasers deposited narrow oxide pockets a butt-coupled configuration c...

Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) with birefringence-induced polarization oscillations have been proposed to generate desired photonic microwave signals. Here, we numerically investigate the generation of signals in an optically pumped quantum dot (QD) spin-VCSEL. First, influence intrinsic key parameters on period-one (P1) and properties is discussed. Second,...