In the past decades the minimum transistor size has been down-scaled according to Moore’s law. However, scaling of conventional MOSFET devices is limited due to short channel effects, gate insulator tunneling and limited control of doping concentrations. FinFETs are the most promising device structures in order to overcome these negative effects. The gate in a FinFET is wrapped around a thin si...

The IEEE 802.15.3a standards body has developed a modification of the Saleh–Valenzuela (SV) multipath channel model as the accepted channel model for ultra-wideband (UWB) investigations. The SV model is a well-defined simulation model that is straightforward to implement. However, since the model as specified is not directly amenable to theoretical analysis, it is constructed here as a two-dime...

Direct and non-invasive measurement of the pressure distribution in test sections of a micro-channel is a challenging, if not an impossible, task. Here, we present an analytical method for extracting the pressure distribution in a deformable microchannel under flow. Our method is based on a measurement of the channel deflection profile as a function of applied hydrostatic pressure; this initial...

In this paper , the threshold variation due to modification in doping profile and random trap position has been analysed. This analysis has been done on N-MOS with 40 nm channel length and 32 nm effective channel length . The trap position is changing from drain end to source end and results were observed for different doping profiles .The results shows that the fluctuation in VThreshold is not...

There is much attention given to emerging technologies like mobile internet because of its increasing popularity. Much research has concentrated on hardware and some have focused on personalisation in terms of content visualisation. The focus of this paper is on mobile content personalisation, seeking to understand the user groups through clustering users based on their profile. This paper focu...