The power requirements imposed on the amplifier by piezoelectric actuators is discussed. We consider a two-degree-of-freedom mechanical system driven by a piezoelectric stack for the purpose of analyzing power flow and power dissipation of four amplifiers. Two of the amplifiers are benchtop linear amplifiers. The other two amplifiers are based on switching topologies. The power consumption of a...

Load mismatch often occurs in radio frequency (RF) power amplifiers (PAs) handset, which can complicate the nonlinear behavior of transmitter, particularly when voltage standing wave ratio (VSWR) is high. To effectively linearize handset PAs with load mismatch, this article, we propose a low-complexity digital predistortion (DPD) model. After carefully analyzing characteristics transmitters wav...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

Digital predistortion (DPD) is used to compensate for the distortion of power amplifiers (PAs). Inspired by physical structure PA circuit, a feedback in DPD model favored. In this letter, we proposed an infinite impulse response (IIR) modeling and linearization, modifying generalized memory polynomial (GMP) model. We also propose iterative identification algorithm estimate IIR-DPD coefficients....

In this paper, a complete design procedure, together with robust system validation approaches, is presented for implementing a high-performance re-configurable digital predistortion (DPD) test platform for compensating for nonlinear distortion and memory effects induced by radio frequency (RF) power amplifiers (PAs) in the transmitters of modern wireless communication systems. This hardware and...

Technical progress in bringing SiGe heterojunction bipolar transistor (HBT) technology to reality has been exceptionally rapid. The first functional SiGe HBT was demonstrated in December 1987, only fifteen years ago. In this fifteen years, since the first demonstration of a functional transistor, SiGe HBT technology has emerged from the research laboratory, entered manufacturing on 200-mm wafer...

The next-generation 5G and beyond-5G wireless systems have stimulated a substantial growth in research, development, deployment of mm-Wave electronic antenna arrays at various scales. It is also envisioned that large dynamic range modulation signals with high spectral efficiency will be ubiquitously employed future communication sensing systems. As the interface between antennas transceiver ele...

The increasing use of mobile networks as the main source of internet connectivity is creating challenges in the infrastructure. Customer demand is a moving target and continuous hardware developments are necessary to supply higher data rates in an environmentally sustainable and cost effective way. This thesis reviews and advances the status of realizing wideband and high efficiency power ampli...

This paper presents the design and analysis of a 5.5 V Class-D stage used in two fully integrated watt-level, +32.0 dBm and +29.7 dBm, outphasing RF Power Amplifiers (PA) in standard 130 nm and 65 nm CMOS technologies. The Class-D stage utilizes a cascode configuration, driven by an AC-coupled low-voltage driver, to allow a 5.5 V supply in the 1.2/2.5 V technologies without excessive device vol...

This paper investigates the feasibility of the application of class E RF power amplifiers in UMTS. A typical class E circuit has been designed and simulated, in conjunction with a linearization scheme based on the EER principle. The EER testbench uses ideal building blocks, since the emphasis is on the operation of the amplifier itself. Three different technologies have been used for the active...