Polysilicon-on-insulator singly addressable arrays, consisting of double-gated field-emission cells, were fabricated and tested. The field-emission tips were formed by a subtractive technique, using an array of ten polysilicon stripes on the insulating substrate. The stripe structure was oxidized for dielectric isolation and coated with a second polysilicon layer as an extracting gate electrode...

Accurate characterization of polycrystalline silicon (polysilicon) is not only a critical monitoring technique for chemical vapor deposition (CVD) process control, but also a necessity for gate line-width control in i-line/DUV lithography and dry etching. It requires that the thickness, refractive index and extinction coefficients (from DUV to near red) in polysilicon films be precisely and rap...

Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...

Variations in micromachining processes cause submicron differences in the size of MEMS devices, which leads to frequency scatter in resonators. A new method of compensating for fabrication process variations is to add material to MEMS structures by the selective deposition of polysilicon. It is performed by electrically heating the MEMS in a 25 C silane environment to activate the local decompo...

In this article, the authors report experimental results of the chemical mechanical polishing CMP of silicon dioxide SiO2 and polysilicon to produce nanoscale features with very smooth surfaces. The sizes of the features polished ranged from 30 to 500 nm. For polysilicon polishing, the nanostructures were defined in positive tone e-beam resist and the pattern was transferred to the oxide substr...

The small-signal voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe bipolar junction transistors (BJT’s) at high frequencies are investigated, and simple analytic equations describing the voltage and current distribution in these regions are derived. It is shown that the frequency-dependent debiasing effects in the polysilicon contacts and intri...

This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of subthreshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors having a value of 125 mV/dec and a DIBL of 210 mV/V. The effect of the polysilicon gate etch is invest...

In this work, we provide a numerical/experimental investigation of the micromechanics-induced scattered response of a polysilicon on-chip MEMS testing device, whose moving structure is constituted by a slender cantilever supporting a massive perforated plate. The geometry of the cantilever was specifically designed to emphasize the micromechanical effects, in compliance with the process constra...

Based on the first resonance frequency measurement of multilayer beams, a simple extraction method has been developed to extract the Young’s modulus of individual layers. To verify this method, the double-layer cantilever, as a typical example, is analyzed to simplify the situation and finite element modeling (FEM) is used in consideration of the buckling and unbuckling situation of cantilevers...

This paper describes the design of two different surface micromachined (MEMS) accelerometers and the use of design and analysis tools intended for macro sized devices. This work leverages a process for integrating both the micromechanical structures and microelectronics circuitry of a MEMS accelerometer on the same chip. In this process, the mechanical components of the sensor are first fabrica...