Post-crystallization heat-treatment of metal-induced laterally crystallized polycrystalline silicon thin film using YAG solid-state laser is characterized. It is found that both the material quality and the TFT performance are related to the laser-treatment condition. The amorphous silicon fraction remaining in the polycrystalline thin film can be reduced and the performance of the thin-film tr...

Nano-particles of polycrystalline Zn Fe2 O4 are prepared using sol-gel method with Ni, and Sm. They are obtained as dried gel after the successful chemical reaction of their respective metal nitrate solutions in the midst of citric acid as catalyst. Synthesis of materials is confirmed using XRD from the report of single phase polycrystalline ferrite material. The magnetic properties of Zn-ferri...

Polycrystalline Platinum Nanofilms Q. G. ZHANG, B. Y. CAO, X. ZHANG, M. FUJII and K. TAKAHASHI, J. Phys.: Condens. Matter, 2006, 18, (34), 7937–7950 The thicknesses of the studied polycrystalline Pt nanofilms (1) ranged from 15.0–63.0 nm and the mean grain sizes varied from 9.5–26.4 nm. The thermal conductivities of (1) measured by a direct electrical heating method are greatly reduced from the...

This study proposes a seed/template-free method that affords high-purity semiconducting nanowires from nanoclusters, which act as basic building blocks for nanomaterials, under supercritical CO2 fluid. Polycrystalline nanowires of Gd-doped ceria (Gd-CeO2) were formed by CO2-mediated non-oriented attachment of the nanoclusters resulting from the dissociation of single-crystalline aggregates. The...

We demonstrate photodiodes in deposited polycrystalline silicon at 1550 nm wavelength with 0.15 A/W responsivity, 40 nA dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of 6 dB/cm, which allows the same microring resonator device to ac...

This letter presents an ultrathin textured polycrystalline oxide (polyoxide) ( ~100 A) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Qhd of...

To visualize the grain boundary role on the shape memory property of Cu-Zn-A1 alloy, we have followed the austenitic structure evolution, of crystals submitted to a training treatment, by synchrotron X-ray topography in white beam. Single crystals, tricrystals and polycrystalline samples have been studied. The comparison of results shows that in polycrystalline samples large, non recoverable st...

Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics o...

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

We report the observation of a very large piezoresistive effect in both polycrystalline and homoepitaxial chemical-vapor-deposited diamond films. The gauge factor for polycrystalline p-type diamond at 500 microstrains was found to be only 6 at room ambient, but increased rapidly with temperature, exceeding that of polycrystalline silicon (30) at 35 ‘C, and that of single-crystal Si (120) at 50 ...