In this paper the uncertainty of a robust photometer circuit (RPC) was estimated. Here, the RPC was considered as a measurement system, having input quantities that were inexactly known, and output quantities that consequently were also inexactly known. Input quantities represent information obtained from calibration certificates, specifications of manufacturers, and tabulated data. Output quan...

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 μW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on ...

A silicon photodiode coated with an interface-engineered Mo/Si multilayer was developed as a polarization sensitive detector. The Mo/B4C/Si multilayer was designed to reflect 13.5-nm extreme-ultraviolet (EUV) radiation at an incident angle of 45 degrees, at which the maximum polarization sensitivity occurs. The sensitivity of this specially coated photodiode and its polarization responses were ...

Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the m...

A high-performance lateral polysilicon photodiode was designed in standard 0.18 μm CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which figure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also...

The current delivered by the photodiode in a self-mixing frequency modulated continuous wave or optical frequency domain reflectometry system consists of a dc-current resulting from the local oscillator, the reflected signal, dark current in the photodiode, and current generated from background light. The current also contains the useful harmonic signal with a beat frequency corresponding to th...

The Multi-angle Imaging SpectroRadiometer (MISR) cameras completed detailed calibration and characterization testing a year ago, as reported in earlier literature. Since that time the cameras have been assembled onto a common flight optical bench, along with photodiode detector standards and diffuse calibration targets. The orderly multiplexing of high-rate data streams from nine camera, twenty...

In Part I of this paper, an improved one-dimensional (1-D) analysis and a semiempirical model of quantum efficiency for CMOS photodiode was illustrated. In this part of the paper, the lateral photoresponse in CMOS photodiode arrays is investigated with test linear photodiode arrays and numerical device simulations. It is shown that the surface recombination and mobility degradation along the Si...

Abstract The CMOS image sensor having VIPS(Vertically Integrated Photodiode Structure) was fabricated for the first time. By adding the high energy(~3MeV) ion implantation to the conventional CIS(CMOS Image Sensor) process, it was verified that the deep photo diode was successfully formed under the normal photodiode on a pixel. And it was observed that this image sensor can detect the visual im...