We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs throug...

Amal al-Wahish Advance Solid state 672 Instructor: Elbio Dagotto Spring 2009 Department of Physics and Astronomy, University of Tennessee [email protected] (Dated: May 12, 2009) Abstract Since the Geothermal and solar heat can be directly converted into electricity by using thermoelectric generators, thermoelectric oxides are potential materials to improve the efficiency of these devices. This wor...

Temperature stabilization is important in many microelectronic devices due to thermal constraints on device operation and lifetime. The work described here is an investigation of thermoelectric phenomena in bipolar devices, speci£cally the p-n diode. Current injection can modify the Peltier coef£cient at interfaces; this can give rise to thermoelectric cooling or heating depending on device par...

The formalism for a linear-response many-body treatment of the electronic contributions to thermal transport is developed for multilayered nanostructures. By properly determining the local heat-current operator, it is possible to show that the Jonson-Mahan theorem for the bulk can be extended to inhomogeneous problems, so the various thermal-transport coefficient integrands are related by power...

Traditional thermoelectric cooling relies on the Peltier effect which produces a temperature drop limited by the figure of merit, zT. This cooling limit is not required from classical thermodynamics but can be traced to problems of thermoelectric compatibility. Alternatively, if a thermoelectric cooler can be designed to achieve full thermoelectric compatibility, lower temperature can be achiev...