In this report, we apply an input-output transformation passivation method, described in our previous works, to an Adaptive Cruise Control system. We analyze the system’s performance under a co-simulation framework that makes use of an online optimization method called extremum-seeking to achieve the optimized behavior. The matrix for passivation method encompasses commonly used methods of seri...

the aisi 316 l stainless steel (ss) specimens were exposed to passivation surface through two different processes including; holding in 40-vol% hno3 at temperature of 60 ºc for 30 min and 15-vol%h2so4 at ambient temperature for 1 hour. the corrosion behavior of specimens was evaluated in physiological solutions by electrochemical in vitro tests through linear and tafel polarization tests. cycli...

This work reports the feasibility of applying emulsion pertraction technology (EPT) aiming at zinc recovery and waste minimization in the zinc electroplating processes that include Cr (III) passivation. The assessment consists of firstly the lifetime extension of the passivation baths by selective removal of the tramp ions zinc and iron, and secondly, the recovery of zinc for further reuse. Spe...

Surface passivation of semiconductor nanocrystals (NCs) is critical in enabling their utilization in novel optoelectronic devices, solar cells, and biological and chemical sensors. Compared to the extensively used liquid-phase NC synthesis and passivation techniques, gas-phase routes provide the unique opportunity for in situ passivation of semiconductor NCs. Herein, we present a method for in ...

We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (SN) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the SN reaction, whereas with UV irradiation RCR dominates, with SN as a secondar...

Results are presented from the photoluminescence properties of C-doped Si-rich thin film oxides implanted with Er, as investigated for various postdeposition implantation and subsequent annealing and passivation conditions. In particular, it was found that the near-infrared Er luminescence intensity can be increased by up to a factor of $4 after a postdeposition anneal at temperatures of 300–11...

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturi...

A systematic set of stress-temperature measurements using the laser-scanning wafer curvature technique is performed to examine the effect of passivation thickness and passivation material on stress evolution and yield properties of passivated Al films during thermal cycling for twenty cycles. A modification of Stoney's equation for multiple films on a substrate is utilized to separate the indiv...

AlGaN/GaN HEMTs have great potential in high power microwave applications [1]. Despite the remarkable improvement in GaN-device technology, the “current collapse” issue has not been completely solved yet, which plays an important role in RF performance. It has been reported that optimizing a surface passivation process can diminish the current collapse phenomenon [2]. In this study, we develope...