نتایج جستجو برای: parallel connection of vsis
تعداد نتایج: 21184285 فیلتر نتایج به سال:
In this study, parallel connection of synchronous generators has been achieved automatically by the monitoring parallel connection conditions with the microcontroller. For this reason, two synchronous generators which are rotated with direct current motors have been connected in parallel. Firstly, the conditions required for parallel connection has been observed with measuring tools. Then, a mi...
This study examines a new approach to selecting the locations of unified power flow controllers (UPFCs) in power system networks based on a dynamic analysis of voltage stability. Power system voltage stability indices (VSIs) including the line stability index (LQP), the voltage collapse proximity indicator (VCPI), and the line stability index (Lmn) are employed to identify the most suitable loc...
Abstract: Voltage source inverters (VSIs) have been widely utilized in electric drives and distributed generations (DGs), where electromagnetic torque, currents and voltages are usually the control objectives. The inverter flux, defined as the integral of the inverter voltage, however, is seldom studied. Although a conventional flux control approach has been developed, it presents major drawbac...
section{introduction} the concept of {sl cartan geometry} appeared at the beginning of the twentieth century, when {e}lie cartan was working on the so-called {sl equivalence problem}, the aim of which is to determine whether two given geometric structures can be mapped bijectively onto each other by some diffeomorphism. this problem can be considered in many different contexts, such as ...
Region growing is a general technique for image segmentation, where image characteristics are used to group adjacent pixels together to form regions. This paper presents a parallel algorithm for solving the region growing problem based on the split and merge approach, and uses it to test and compare various parallel architectures and programming models. The implementations were done on the Conn...
Power semiconductor devices are often connected in parallel to increase the current rating of power conversion systems. However, due mismatched circuit parameters or fabrication discrepancies, paralleled can be unbalanced, which potentially leads accelerated aging and long-term reliability issues. The fast-switching speed silicon carbide (SiC) aggravates this problem its higher sensitivity para...
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