For about a year I have been experimenting with extremely high intercept amplifiers using 2N5109 bipolar junction transistors (BJTs). These kinds of amplifiers, known as common base transformer feedback (CBTF) amplifiers, and also known as common base noiseless feedback amplifiers, if properly designed and used, offer MW DXers (and SW DXers, though their needs are not as extreme as MW DXers) am...

This paper presents an ultra-low voltage and low power current bleeding CMOS double balanced mixer targeted for ZigBee application in 2.4GHz frequency band. It introduces and discusses a modified CMOS based current bleeding mixer topology adopting a combination of NMOS current bleeding transistor, with a PMOS Local Oscillator (LO) switching stage and integrated inductors to achieve ultra-low vo...

A 900MHz balanced harmonic mixer for direct conversion receivers is fabricated in a 0.35 μm standard digital CMOS process. The self-mixing-induced DC offset is about 44dB lower than that of the conventional mixer. The inputreferred offset is reduced to the noise level. Specific techniques on flicker noise reduction are also discussed. At 3V power supply and -15.4dBm LO power, it achieves 13 dB ...

In this paper, a low voltage low power up-conversion mixer, designed in a Chartered 0.18 μm RFCMOS technology, is proposed to realize the transmitter front-end in the frequency band of 2.4 GHz. The up-conversion mixer uses the current mirror topology and current-bleeding technique in both the driver and switching stages with a simple degeneration resistor. The proposed mixer converts an input o...

Abstract– In this paper, two low noise amplifiers (LNAs), one without feedback and another one with active shunt partial feedback, are proposed for ultra wide band (UWB) applications. Both the proposed LNAs are designed using 90 nm CMOS technology and their performance parameters are analyzed by using post layout simulation. The proposed LNA without feedback achieves a power gain (S21) of 16.4 ...

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding dir...

This work presents and analyses the design of a multi-mode Low Noise Amplifier (LNA) dedicated to 2.4 GHz Wireless Sensor Network (WSN) applications. The proposed inductorless LNA, implemented in 28 nm FDSOI CMOS technology, is based on common-gate configuration imbedded with common-source stage boost overall transconductance circuit. LNA specifically designed, optimized, address three modes op...

A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1m silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source–follower, and cascode with on-chip spiral inductors and MOS capacitors. The gain is 7.3 dB, while input and output reflection coefficients are 45 and 9.4 dB, respectively. Positive gain is exhibited beyond 26 GHz. Th...

Spurious-free dynamic range (SFDR) is a key specification of radio receivers and spectrum analyzers, characterizing the maximum distance between signal and noise+distortion. SFDR is limited by the linearity (intercept point IIP3 mostly, sometimes IIP2) and the noise floor. As receivers already have low noise figure (NF) there is more room for improving the SFDR by increasing the linearity. As t...

In this paper, a CMOS low-noise amplifier (LNA) with a new input matching topology has been proposed, analyzed and measured. The input matching network is designed through the technique of capacitive feedback matching network. The proposed LNA which is implemented in a 0:18-mm1P6M CMOS technology is operated at the frequency of 12.8GHz. It has a gain S21 of 13.2 dB, a noise figure (NF) of 4.57 ...