نتایج جستجو برای: non linear gan

تعداد نتایج: 1714688  

2011
Mastura Shafinaz Zainal Abidin Abdul Manaf Hashim Maneea Eizadi Sharifabad Shaharin Fadzli Abd Rahman Taizoh Sadoh

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN s...

2012
Xiaojuan Sun Dabing Li Hang Song Yiren Chen Hong Jiang Guoqing Miao Zhiming Li

In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth co...

2013
Guibao Xu Guan Sun Yujie J. Ding Hongping Zhao Guangyu Liu Jing Zhang Nelson Tansu

Related Articles Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on rsapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells J. Appl. Phys. 112, 033513 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitti...

Journal: :IEEE Access 2023

This study aims to assess the performance of Gallium Nitride (GaN)-based inverters in high-power applications through simulations and a hardware-in-the-loop experiment. The focus is on efficacy GaN-based for multilevel topologies, five-level cascaded H-bridge inverter controlled by Texas Instruments (TI) C2000 microcontroller was used conduct Prior experiment, were conducted showcase setup half...

2014
M. Tanzid M. A. Andersson J. Sun

Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.

Journal: :journal of medical signals and sensors 0
yoones imani niloufar teyfouri mohammad reza ahmadzadeh marzieh golabbakhsh

motion analysis and quality assessment of human sperm cell is of great importance for clinical applications of male infertility. sperm tracking is quite complex due to cell collision, occlusion and missed detection. the goal of this study is simultaneous tracking of multiple human sperm cells. in the first step in this research the frame difference algorithm is used for background subtraction. ...

Journal: :iranian journal of applied animal science 2015
a.o. raji l.g. asheikh i.d. mohammed

this study compared the use of five different models to describe the growth from birth to 20 weeks of age of kids from both genders of nondescript goats. fifty nine (59) nondescript kids were weighed weekly at the university of maiduguri livestock teaching and research farm, nigeria and the live weights were modeled. biologically relevant variables were estimated for each kid from the logistic,...

Journal: :caspian journal of mathematical sciences 2014
b. pourhassan j. khalilzadeh

in this paper, we consider non-linear ginsburg-pitaevski-gross equation with the rosen-morse and modifiedwoods-saxon potentials which is corresponding to the quantum vortices and has important applications in turbulence theory. we use the runge- kutta-fehlberg approximation method to solve the resulting non-linear equation.

2002
M. Berroth E. Chigaeva I. Dettmann N. Wieser W. Vogel H. Roll F. Scholz H. Schweizer

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also ...

2015
Sandeep R. Bahl

A comprehensive methodology to qualify the reliability of GaN products 2 Introduction The industry takes the reliability of silicon power transistors for granted due to over thirty years of experience and continuous improvement. This longstanding experience has resulted in a mature qualification methodology, whereby reliability and quality are certified by running standardized tests. These test...

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