نتایج جستجو برای: non linear gan
تعداد نتایج: 1714688 فیلتر نتایج به سال:
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN s...
In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth co...
Related Articles Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on rsapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells J. Appl. Phys. 112, 033513 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitti...
This study aims to assess the performance of Gallium Nitride (GaN)-based inverters in high-power applications through simulations and a hardware-in-the-loop experiment. The focus is on efficacy GaN-based for multilevel topologies, five-level cascaded H-bridge inverter controlled by Texas Instruments (TI) C2000 microcontroller was used conduct Prior experiment, were conducted showcase setup half...
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motion analysis and quality assessment of human sperm cell is of great importance for clinical applications of male infertility. sperm tracking is quite complex due to cell collision, occlusion and missed detection. the goal of this study is simultaneous tracking of multiple human sperm cells. in the first step in this research the frame difference algorithm is used for background subtraction. ...
this study compared the use of five different models to describe the growth from birth to 20 weeks of age of kids from both genders of nondescript goats. fifty nine (59) nondescript kids were weighed weekly at the university of maiduguri livestock teaching and research farm, nigeria and the live weights were modeled. biologically relevant variables were estimated for each kid from the logistic,...
in this paper, we consider non-linear ginsburg-pitaevski-gross equation with the rosen-morse and modifiedwoods-saxon potentials which is corresponding to the quantum vortices and has important applications in turbulence theory. we use the runge- kutta-fehlberg approximation method to solve the resulting non-linear equation.
For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also ...
A comprehensive methodology to qualify the reliability of GaN products 2 Introduction The industry takes the reliability of silicon power transistors for granted due to over thirty years of experience and continuous improvement. This longstanding experience has resulted in a mature qualification methodology, whereby reliability and quality are certified by running standardized tests. These test...
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