Preparation of nanomaterials with various morphologies and exploiting their novel physical properties are of vital importance in nanoscientific field. Similarly to the III-N compound semiconductors, Si3N4 nanostructures also could be potentially used for making optoelectronic devices. In this paper, we report on an improved Fe-catalyzed chemical vapour deposition method for synthesizing ultra-l...

Articles you may be interested in Origin of subgap states in amorphous In-Ga-Zn-O A pathway to p-type wide-band-gap semiconductors Appl. We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion...

Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal–oxide–semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well a...

Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorban...

Silicon electronics dominates information processing, and offers a remarkable technology for making very complex systems for very little cost. Many of the waveguide passive optical components that we use today in telecommunications, such as wavelength splitters, use the same technology base – the silicon, silicon dioxide and silicon nitride that are the semiconductors and insulators of electron...

Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using...

Group III-nitride semiconductors are a main research interest in the optoelectronics because of their unique physical and electronic properties [1]. The thin layers of these semiconductors at the nanoscale are now very common in the modern devices. Hence, proper materials characterizations with high spatial and compositional resolution such as electron energy loss spectroscopy (EELS) are essent...

A spatially varying bandgap drives exciton motion and can be used to funnel energy within a solid (Nat. Photonics 2012, 6, 866-872). This bandgap modulation can be created by composition variation (traditional heterojunction), elastic strain, or in the work shown next, by a small twist between two identical semiconducting atomic sheets, creating an internal stacking translation u(r) that varies...