Within a simple mean-field model (self-consistent Hartree approximation) we discuss the possibility of polaron formation on a molecular wire as a mechanism for negative differential resistance (NDR), switching, and/or hysteresis in the I-V characteristic of molecular junctions. This mechanism differs from earlier proposed mechanisms of charging and conformational change. The polaron model captu...

We report stable and reproducible switching and memory effects in self-assembled monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronica...

In the quest to push contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. this work, quasi-1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into novel field-effect transistor architecture capable of combining based electronics with an electrostatically tuna...

The behavior of two frequency divider circuits using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of three resistors (R) and two bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its current-voltage curve by suitably designing the resistances. We discuss a dynamic frequency divider, which is made of a R-BJT-NDR circuit, an in...

A vertically integrated and serially connected npnp Si-based resonant interband tunnelling diode (RITD) pair is realised with low temperature molecular beam epitaxy (MBE) by monolithically stacking two RITDs with different spacer thicknesses. The asymmetric design manifests as unequal peak current densities that provide for much larger and uniform separation of the holding states for multi-valu...

Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal-semiconductor-metal (Al-Ge-Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are attributed to intervalley electron transfer. At yet higher electric fields, impact ionization leads to an exponential...

The dependence of band-to-band tunneling in p+-Si1−xGex /n+-Si1−xGex homojunctions on Ge fraction and electric field is investigated in the range 2–3×108 V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunnel...

Bio-inspired computing promises fundamentally different ways to advances in artificial intelligence with extreme energy efficiency. Memristive technologies due the non-volatility, high density, low-power, and synaptic bionic properties can help realizing bio-inspired architecture its hardware implementation. This paper proposes a novel physics-oriented memristor model coexistence of negative di...

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting str...

We tested the electrical characteristics of an oligo phenylene ethynylene OPE molecule with one nitro side group, an OPE with two nitro side groups, and an OPE with no nitro side groups in our nanowell device. The OPE molecule with nitro side group s showed switching behavior with memory as well as nonreversible negative differential resistance NDR . Current-voltage I-V characteristics showed a...