The thermal conductivity of individual single-crystalline Bi nanowires grown by the on-film formation of nanowires (ON-OFF) has been investigated. We observed that the thermal conductivity of single-crystalline Bi nanowires is highly anisotropic. Thermal conductivity of nanowires (diameter ∼100 nm) in the off-axis [102] and [110] directions exhibits a difference of ∼7.0 W/m·K. The thermal condu...

piezoelectric nanobeams having circular, rectangular and hexagonal cross-sections are synthesized and used in various nano structures; however, piezoelectric nanobeams with hexagonal cross-sections have not been studied in detail. in particular, the physical mechanisms of the surface effect and the role of surface stress, surface elasticity and surface piezoelectricity have not been discussed t...

The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we report on phonon engineering in metal-catalyzed silicon nanowires with tailor-made isotopic compositi...

Single-crystalline, high-quality branched ZnTe-core/ZnO-branch nanoheterostructures were synthesized by an in situ strategy in an environmental scanning electron microscope. Composition and structure characterization confirmed that ZnO nanowires were perfectly epitaxially grown on ZnTe nanowires as branches. Noticeably, growth temperature plays a crucial role in determining the density and diam...

We perform molecular dynamics (MD) simulations to investigate the effect of polar surfaces on the thermal transport in zinc oxide (ZnO) nanowires. We find that the thermal conductivity of nanowires with free polar (0001) surfaces is much higher than that of nanowires that have been stabilized with reduced charges on the polar (0001) surfaces, and also hexagonal nanowires without any transverse ...

We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor-liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nan...

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demons...

Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature T f from 1150 to 1850 °C. At a T f of 1450 °C, the heterostructure nanowires were formed by crystallin...

Quasi one-dimensional nanowires possess unique electrical, electronic, thermoelectrical, optical, magnetic and chemical properties, which are different from that of their parent counterpart. The physical properties of nanowires are influenced by the morphology of the nanowires, diameter dependent band gap, carrier density of states etc. Nanowires hold lot of promises for different applications....

CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm. The dark-field images of nanowires reveal that the crystallinity of nanowires wa...