We have constructed devices in which the interior of a single-walled carbon nanotube (SWCNT) field-effect transistor acts as a nanofluidic channel that connects two fluid reservoirs, permitting measurement of the electronic properties of the SWCNT as it is wetted by an analyte. Wetting of the inside of the SWCNT by water turns the transistor on, while wetting of the outside has little effect. T...

In this paper, we characterize the Energy-Delay performance of logic circuits realized using Single Electron Transistor (SET) devices. As technology scaling progresses, it is getting increasingly challenging to continue reducing energy, especially at low activity factors and low VCC, due to increasing leakage energy dominance. A SET can be viewed as the ultimate transistor operating in the limi...

Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have ...

We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good unifor...

We investigated novel patterning techniques to produce ultrafine patterns for nanoscale devices. Hydrogen silsesquioxane HSQ was employed as a high-resolution negative tone inorganic electron beam resist. The nanoscale patterns with sub-10 nm linewidth were successfully formed. A trimming process of HSQ by the reactive ion etcher RIE played an important role for the formation of 5 nm nanowire p...

Nanoelectronic devices offer substantial potential for interrogating biological systems, although nearly all work has focused on planar device designs. We have overcome this limitation through synthetic integration of a nanoscale field-effect transistor (nanoFET) device at the tip of an acute-angle kinked silicon nanowire, where nanoscale connections are made by the arms of the kinked nanostruc...