Introduction and Objectives Forty years ago Gordon Moore predicted exponential growth in the density of electronic circuits, a forecast that has been realized. A concomitant of this remarkable achievement is that design and manufacturing costs have increased dramatically. We are approaching a tipping point at which either exponential growth in density will cease or new technologies and methods ...

Seamless and minimally invasive integration of 3D electronic circuitry within host materials could enable the development of materials systems that are self-monitoring and allow for communication with external environments. Here, we report a general strategy for preparing ordered 3D interconnected and addressable macroporous nanoelectronic networks from ordered 2D nanowire nanoelectronic precur...

The well-defined geometry, exceptional mechanical properties, and extraordinary electrical characteristics of carbon nanotubes qualify them for structuring nanoelectronic circuits, nanoelectromechanical systems, and nanorobotic systems. Relative displacements between the atomically smooth, nested shells in multiwalled carbon nanotubes can be used as robust nanoscale motion enabling mechanisms f...

Spintronics attracts at present much interest because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic elements. Utilizing spin properties of electrons opens great opportunities to reduce device power consumption in future electronic circuits. Silicon, the main element of microelectronics, is promising for spin-driven applications. U...

Significant progress in integrated circuits performance has been supported by the miniaturization of the transistor feature size. With transistor scalability gradually slowing down new concepts have to be introduced in order to maintain the computational speed increase at reduced power consumption for future microand nanoelectronic devices. A promising alternative to the charge degree of freedo...

Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane HSQ and calixarene were the only two reported negative resists that could approach sub-10-nm half-pitch resolution for electron-beam lithography. Here, the aut...

In this paper, we review the current status of nanoelectronic devices based on quantum effects such as quantization of motion and interference, and those based on single electron charging phenomena in ultrasmall structures. In the first part, we discuss wave-behavior in quantum semiconductor structures, and several device structures based on quantum waveguide behavior such as stub tuners, Y-bra...