In order to make photovoltaics an economically viable energy solution, next-generation solar cells with higher energy conversion efficiencies and lower costs are urgently desired. Among many possible solutions, three-dimensional (3D) silicon nanostructures with excellent light-trapping properties are one of the promising candidates and have recently attracted considerable attention for cost-eff...

In this manuscript we describe two experiments. The first one is life testing of three commercial high-power phosphor-converted (pc) white LEDs under three different operating temperatures. The second is life testing of two commercial lighting systems that use highpower pc-white LEDs. Life testing was conducted per ASSIST recommends guidelines. Results showed that LED life is very much affected...

Static p-n junctions in inorganic semiconductors are exploited in a wide range of today's electronic appliances. Here, we demonstrate the in situ formation of a dynamic p-n junction structure within an organic semiconductor through electrochemistry. Specifically, we use scanning kelvin probe microscopy and optical probing on planar light-emitting electrochemical cells (LECs) with a mixture of a...

Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Interesting electronic properties of a 'topological' p-n junction w...

The tight junction is the most apical intercellular junction of epithelial cells and forms a diffusion barrier between individual cells. Occludin is an integral membrane protein specifically associated with the tight junction which may contribute to the function or regulation of this intercellular seal. In order to elucidate the role of occludin at the tight junction, a full length and an N-ter...

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. New device technologies and products have lead to an ever increasing size and variety of the markets addressed by SiC. The specific material properties and the new applications served by SiC devices give rise to specific reliability requirements, reaching beyond the ...

Exact solutions to a nonlinear Schrödinger lattice with a saturable nonlinearity are reported. For finite lattices we find two different standing-wave-like solutions, and for an infinite lattice we find a localized soliton-like solution. The existence requirements and stability of these solutions are discussed, and we find that our solutions are linearly stable in most cases. We also show that ...

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is e...

A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...