The Mn ion is a promising activator ion for tunable and short-pulse laser materials because of its broadband luminescence in the spectral region 850-1600 nm and its simple 3d electronic configuration, which excludes an occurrence of undesirable exited-state absorption into higher 3d levels. However, hexavalent manganese can be stabilized only in the tetrahedral oxo-coordination and easily reduc...

To what extent the presence of transition metal ions can affect the optical properties of structurally well-defined, metal-doped polyoxotitanium (POT) cages is a key question in respect to how closely these species model technologically important metal-doped TiO2. This also has direct implications to the potential applications of these organically-soluble inorganic cages as photocatalytic redox...

The band ordering of semiconductors is an important factor in determining the mobility and coherence of the wave function of carriers, and is thus a key factor in device performance. However, in heavily doped semiconductors, the impurities substantially disturb the band ordering, leading to significant degradation in performance. Here, we present the unexpected finding that the band ordering is...

Manipulating electronic and magnetic properties of two-dimensional (2D) transitional-metal dichalcogenides (TMDs) MX2 by doping has raised a lot of attention recently. By performing the first-principles calculations, we have investigated the structural, electronic, and magnetic properties of transitional metal (TM)-doped MoS2 at low and high impurity concentrations. Our calculation result indic...

In this study, undoped ZnO and doped with Fe and Mn nanostructures were synthesized by hydrothermal method. The morphology of nanostructures was characterized by Scanning Electron Microscope. The electrochemical response of the carbon paste electrode modified with nanoparticles of ZnO and also ZnO doped with Fe and Mn toward levodopa (L-Dopa) was studied. Studies of cyclic voltammetry using pro...

Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Ha...

For the first time, we report the applications of Mn(2+)-doped ZnS@cysteine nanoparticles (NPs) as matrices for analysis of coccidiostats (lasalocid, monensin, salinomycin and narasin) and peptide mixtures (Met-enk, Leu-enk, HW6 and gramicidin) in surface-assisted laser desorption/ionization time-of-flight mass spectrometry (SALDI-TOF MS). The Mn(2+)-doped ZnS@cysteine NPs have been successfull...

First-principles simulations have been performed for [001]-ordered Mn/Ge and Mn/GaAs " digital alloys " , focusing on the effects of i) a larger band-gap and ii) a different semiconducting host on the electronic structure of the magnetic semiconductors of interest. Our results for the exchange constants in Mn/Ge, evaluated using a frozen-magnon scheme, show that a larger band-gap tends to give ...

Using first principles calculations based on gradient corrected density functional theory we show that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. This change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths, which is significantly greater on the surface than in the bulk. The present study prov...

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...