A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...

The torque generated by the transfer of spin angular momentum from a spin-polarized current to a nanoscale ferromagnet can switch the orientation of the nanomagnet much more efficiently than a current-generated magnetic field and is therefore in development for use in next-generation magnetic random access memory MRAM . Up to now, experiments have focused on spin-torque switching driven by simp...

in this research, the structural behavior of timber and concrete sleepers in a standard railway turnout is evaluated, in the case of raising speed. in approaching this evaluation, current practices in the structural analysis of sleepers are surveyed and then, the sensitivity analysis with abaqus software is made based on selected criteria (bending and shear stresses as well as contact pressure)...

This paper signifies a very basic design and simulation techniques of RF MEMS switches using the advanced design systems software tool (ADS).Micro electro mechanical systems are recent development technologies which has better characteristics performance and also operating at microwave range of frequencies. Fundamentally MEMS switches can be categorized into two types series switches (ohmic typ...

Plasma Erosion Opening Switch (PEOS) experiments are described covering a conduction time range from 35 ns on Gamhle I to 2300 ns on Pawn. A microwave interferometer is used to estimate the plasma density for some of the experimental cases. The conduction current, conduction time, geometrical configuration and density are used to calculate the plasma center-of-mass displacement from JxB forces ...

In this paper, RF MEMS Capacitive Switches for two different dielectrics hafnium oxide (HfO2) and silicon nitride (Si3N4) are presented. The switches have been characterized and compared in terms of RF performance. The major impact of the change from Si3N4 to HfO2 having dielectric constant 20 is the reduction in overall dimension of the switch; capacitive area is reduced by 66% leading to over...

A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation...