A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) ?-Ga 2 O 3 thin films is proposed in terms competitive surface process between and Ga atoms. The outcome can describe major feature doping indicate a growth rate-dependent behavior, which validated experimentally further generalized to different conditions substrate orientations.

GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using an AlxGa1-xAs seed layer with different aluminum content x in the solid solution are investigated. The effect of composition density and size antiphase domains emerging sample surface optical properties GaAs is shown. Si(100) a small unintentional miscut 0.7° to [110] were used for growth.

We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximu...

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