In this paper for the first time we report a study on the small signal characterization and simulation of Single Halo (SH) thin film SOI nMOSFETs. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration on the drain side. Besides having excellent dc output characteristics, better Vth – L roll-off control, low DIBL, hig...

A new technique for determining the parasitic source resistance in Heterostructure Field-Effect Transistors (HFET’s) is preManuscript received March 8, 1990; revised April 20, 1990. This work has been partially sponsored by an EECS Special Projects Fund from the MIT and by a TRW Scholarship from the MIT Undergraduate Research Opportunities Program. The review of this brief was arranged by Assoc...

In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence ...

In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 1020 cm-3 was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-...

The novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG SOI MOSFET. The two-dimensional numerical simulation studies demonstrate that the application of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain output resistance, kink free output c...

The shrinking MOSFET has an increasing subthreshold leakage current caused by various mechanisms. For example, the band-to-band tunneling (BTBT) current from drain to channel results in a large subthreshold leakage current in a 50nm MOSFET [1]. Recently, the double-gate (DG) fully depleted (FD) MOS was investigated. In the DG-MOS, the channel region is intrinsic or lightly doped silicon so that...

Chemical vapor deposition (CVD) of singlewalled carbon nanotubes (SWNTs) has been improved in growth controllability for the practical application in electronic and optical devices. Vertically aligned growth of nitrogen-doped and small-diameter SWNTs and horizontally aligned growth on crystal quartz are described. By developing the patterned growth technique, transparent and flexible field effe...

We demonstrate a glucose sensor based on an organic electrochemical transistor (OECT) in which the channel, source, drain, and gate electrodes are made from the conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS). The OECT employs a ferrocene mediator to shuttle electrons between the enzyme glucose oxidase and a PEDOT:PSS gate electrode. The device...

Nanostructures, which have sizes comparable to biological functional units involved in cellular communication, offer the potential for enhanced sensitivity and spatial resolution compared to planar metal and semiconductor structures. Silicon nanowire (SiNW) field-effect transistors (FETs) have been used as a platform for biomolecular sensors, which maintain excellent signal-to-noise ratios whil...