Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He⁺) bombardment and annealing on the contact resistance between graphene and various metals (Ag, Pd, and Pt) were systematically explored. It is found that the contact resistances between all metals ...

Ion-beam bombardment/rnilling was used for sharpening of diamond particles deposited on ends of silicon tips. Radii curvature of diamond coating down to about 20 nm have been formed in such a way. Field emission experiments with sharpened diamond coated emitters have shown that the ion beam treatment effects a considerable shift of current-voltage characteristics of in the lower voltage region.

Many properties of nanoparticles (NPs) are closely tied to their size, shape, surface, and internal structures [1, 2]. Different synthesis methods can produce an array of NP sizes and shapes, but it is also desirable to have methods to modify existing NPs. Extensive research on ion beam induced surface modification of bulk materials [3] has led to a strong understanding of ion-solid interaction...

During plasma-based in situ chamber cleaning of deposited dielectric films using NF3 , a transformation of aluminum chamber parts into AlFx can take place. We studied the roles of fluorine atoms and ion bombardment in this process by employing NF3 discharges mixed with He, Ne, or Ar interacting with or without ion bombardment with sputter-deposited Al films on silicon. Aluminum oxide erosion ra...

Measured cross sections after heavy ion bombardment, for both single and double strand breaks of SV-40 virus in EO buffer (which emphasizes indirect effects), are consistent with the theory of Butts and Katz for 1-hit detectors.

There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1...