Simple nanoporous alumina matrix modification procedure, in which the electrically highly insulating alumina barrier layer at the bottom of the pores is replaced with the conductive layer of the gold beds, was described. This modification makes possible the direct electron exchange between the underlying aluminum support and the redox species encapsulated in the alumina pores, thus, providing t...

We report the dielectric properties of improper ferroelectric hexagonal (h-)ErMnO3. From bulk characterization, we observe a temperature and frequency range with two distinct relaxation-like features, leading to high even “colossal” values for permittivity. One feature trivially originates from formation Schottky barrier at electrode–sample interface, whereas second one relates an internal laye...

HighNMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a highdielectric layer ( = 20). Electron mobilities of 6000 and 3822 cm Vs have been measured for sheet carrier co...

Simple nanoporous alumina matrix modification procedure, in which the electrically highly insulating alumina barrier layer at the bottom of the pores is replaced with the conductive layer of the gold beds, was described. This modification makes possible the direct electron exchange between the underlying aluminum support and the redox species encapsulated in the alumina pores, thus, providing t...

Observing single electron pulses provides insight into the mechanism that leads to sudden high current jumps (breakdown) in aged wire chambers. This single electron activity is found to be consistent with the Fowler-Nordheim equation for field emission of electrons from a cathode surface in a high electric field. The high electric field arises from the positive ion buildup on a very thin insula...

We have investigated the transport properties of LaVO_{3}/SrTiO_{3} Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_{2}/LaO/TiO_{2} polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_{2}/SrO/TiO_{2} interface, formed by insertin...

A polymer/PCBM hybrid electron transport layer is reported that enables high-performance perovskite solar cells with a high power conversion efficiency of 16.2% and with negligible hysteresis. Unlike previous approaches of reducing hysteresis by thermal annealing or fullerene passivation, the success of our approach can be mainly attributed to the doping of the PCBM layer using an insulating po...

The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of sil...

We propose two coupled electron-hole sheets of few-layer graphene as a new nanostructure to observe superfluidity at enhanced densities and enhanced transition temperatures. For ABC stacked few-layer graphene we show that the strongly correlated electron-hole pairing regime is readily accessible experimentally using current technologies. We find for double trilayer and quadlayer graphene sheets...