The wide-bandgap semiconducting material, zinc sulfide, has been coated on indium phosphide nanoclusters to a 1-2-Å thickness. The resulting InP-ZnS core-shell particle (as shown in the TEM image; scale 1 cm=5 nm) exhibits bright luminescence at room temperature with quantum efficiencies as high as 23 %.

Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer ;600-nm-thick films of ~100! InP to Si substrates. Cross-section transmission electron microscopy ~TEM! shows a transferred crystalline InP layer with no observable defects in the region near the bonded interface and an intimately bonded interface. InP and Si are covalently bonded as inferred by the fact that InP...

A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array. In -X Ga As is a Ill-V alloy whose cutoff wavelength can be tuned from 0.8 jim (GaAs) to 3.5 jim (InAs). Due to the spectral windows of 3-5 ...

A novel monolithic programmable optical lattice filter consisting of unit cell building blocks is proposed. Single unit cells incorporating a ring resonator in one arm of a Mach–Zehnder are fabricated in an InGaAsP–InP material system. Programmable poles and zeros are demonstrated and monolithically cascaded unit cells are used to synthesize a flat passband.

The band-gap energy and the band line-up of InGaAlAs quaternary compound material on InP are essential information for the theoretical study of physical properties and the design of optoelectronics devices operating in the long-wavelength communication window. The bandgap interpolation of In1 − x − yGaxAlyAs on InP is known to be a challenging task due to the observed discrepancy of experimenta...

High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications Himanshu Kataria TRITA-ICT/MAP AVH Report 2014:13; ISSN 1653-7610; ISRN KTH/ICT-MAP/AVH-2014:13-SE ISBN 978-91-7595-289-5 Abstract This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) ...

Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed, and their optical absorption features in the near-infrared (NIR) have been interpreted as arising from a localized surface plasmon resonance (LSPR). Our pump-probe measurements on platelet-shaped Cu3-x P NCs corroborate the plasmonic character of this absorption. In accordance with studies on crystal structu...

We report on the InGaAs/GaAsSb material system lattice-matched to InP for intersubband devices. Due to the much lower electron effective mass in the GaAsSb barrier material, this system is very promising for the realization of high performance intersubband devices, like quantum-cascade lasers and quantum well infrared photodetectors. Type I intersubband absorption in InGaAs/GaAsSb multi-quantum...

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was differe...