We demonstrate a scalable and facile lithography-free method for fabricating highly uniform and sensitive In2O3 nanoribbon biosensor arrays. Fabrication with shadow masks as the patterning method instead of conventional lithography provides low-cost, time-efficient, and high-throughput In2O3 nanoribbon biosensors without photoresist contamination. Combined with electronic enzyme-linked immunoso...

For the first time, ordered mesoporous ZnO nanoparticles have been synthesized by a template method. The electroplating after chemical plating method was creatively used to form copper film on the surface of the prepared ZnO, and then a CuO film-decorated ordered porous ZnO composite (CuO/ZnO) was obtained by a high-temperature oxidation method. In2O3 was loaded into the prepared CuO film-ZnO b...

Structural and electronic properties of pure In2O3 and its alloys with Sc, Y, La and Ac including the band gap, the effective mass and the effect of dopant ionic radius have been investigated using density functional theory (DFT). The full potential linearized augmented plane wave (FL-LAPW) method was used with the local density approximation (LDA+U). The calculated results indicated that, subs...

Nanostructure field-effect transistor (FET) biosensors have shown great promise for ultra sensitive biomolecular detection. Top-down assembly of these sensors increases scalability and device uniformity but faces fabrication challenges in achieving the small dimensions needed for sensitivity. We report top-down fabricated indium oxide (In2O3) nanoribbon FET biosensors using highly scalable radi...

Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which...

Pure In2O3 and 6% Cr-doped thin films were prepared on a silicon (Si) substrate by pulsed laser deposition technique. The obtained In2O3/In2O3:Cr structural, morphological, optical, magnetic gas sensing properties briefly investigated. X-ray diffraction results confirmed that the grown are in single-phase cubic bixbyte structure with space group Ia-3. SEM analysis showed formation of agglomerat...

As an n-type semiconductor, In2O3 is considered a promising photocatalyst for producing amino acids using biomass derivatives as precursors. However, similar to other intrinsic semiconductors, suffers from poor charge dynamics. Herein, we show the synthesis of Mo-doped (Mo-In2O3) with porous rod-shaped structure through one-step solvothermal reaction followed by calcination. Under visible-light...

The pellet-type SnO2 sensor was synthesized by the solid state method and the effects of additives such as nano ZnO (1-12 mol %) and nano In2O3 (1-10 mol %) on the CO gas sensitivity of sensor were investigated. The optimum sintering temperature was chosen 800°C because of the porosity content of the samples. The phase analysis and microstructure of the samples were studied by x-ray diffraction...

The local structure of In2O3 cosubstituted with Zn and Sn (In2 2xSnxZnxO3, xr0.4 or ZITO) was determined by extended X-ray absorption fine structure (EXAFS) for x=0.1, 0.2, 0.3 and 0.4. The host bixbyite In2O3 structure is maintained up to the enhanced substitution limit (x=0.4). The EXAFS spectra are consistent with random substitution of In by the smaller Zn and Sn cations, a result that is c...