Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the pres...

Indium antimonide (InSb), a narrow band gap III-V semiconductor is a promising infrared-active material for various optoelectronic applications. Synthetic challenge of colloidal InSb nanocrystals (NCs) lies in the limited choice of precursors. Only a few successful synthetic schemes involving highly toxic stibine (SbH3) or air- and moisture-sensitive metal silylamides (In[N(Si-(Me)3)2]3 or Sb[N...

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and t...

Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...

Systematic explorations of new phases in the A(I)-In(III)-I(V)-O system by hydrothermal reactions led to five new compounds, namely, AIn(IO(3))(4) (A = Li, Na), Rb(3)In(IO(3))(6) and A(2)HIn(IO(3))(6) (A = Rb, Cs). The structure of AIn(IO(3))(4) (A = Li, Na) contains one-dimensional [In(IO(3))(4)](-) chains separated by Li(+) or Na(+) cations. In both compounds, each In(3+) cation is octahedral...

We use a Monte Carlo approach to investigate the electron transport in Indium Nitride. Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) are conducted. All relevant scattering mechanisms are accounted for. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.

We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively ex...

Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...

Results of the investigation of the reactions of GaCl3, InCl3 and InI3 with LiNH2 under solvothermal conditions in benzene, which lead to metal nitrides, are reported. GaN is obtained as a cubic phase or as a mixture of cubic and hexagonal phases, depending on temperature. The effect of the addition of surfactants on the formation of GaN was explored. InN products were always contaminated with ...

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