نتایج جستجو برای: hfet

تعداد نتایج: 80  

Journal: :International journal of automotive science and technology 2021

Selection of transmission systems motor vehicles used on highways is high-ly important in terms fuel consumption and vehicle efficiency. In this study, effect using 3 different gearboxes a passenger car (automatic gearbox, CVT gearbox manuel gearbox) driveline friction losses engine operation interval by means GT SUITE modelling programme. The model formed has been simulated driving cycles (WLT...

Journal: :IEEE Transactions on Transportation Electrification 2021

This article presents a new open-end winding induction motor (OEWIM)-based dual-motor differential four-wheel drive (D4WD) for the electric vehicle (EV). Constant speed operation through cruise control is achieved using direct torque (DTC) algorithm. The redundant vectors are used in switching vector selection of DTC algorithm to achieve balanced battery currents. Fault-tolerant (FTO) demonstra...

Journal: :IEEE Transactions on Industrial Electronics 2022

For high-power electric vehicles (EVs), the drive propulsion based on induction motors is emerging as economical alternative. Compared to conventional motors, open-end winding motor (OEWIM) requires only half dc-bus voltage for given torque. The EV power train dual two-level voltage-source inverter (VSI)-fed OEWIM with isolated dc sources used in this research. uniform state-of-charge (SoC) dis...

2004
K. Fobelets W. Jeamsaksiri C. Papavasilliou T. Vilches V. Gaspari J. E. Velazquez-Perez K. Michelakis T. Hackbarth

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immat...

2009
J. H. Leach M. Wu X. Ni X. Li Ü. Özgür H. Morkoç

Grown lattice matched to GaN, InAlN-based heterojunction field effect transistors (HFETs) are promising due to the relatively large band discontinuity at the interface and lack of misfit strain. Despite the recent progress in the growth, there still exists some questions as to the true lattice matching condition of InAlN to GaN due to discrepancies in the value of the lattice parameters of the ...

Journal: :International journal of automotive science and technology 2022

Vehicle simulations have a very important place in the automotive R&D process. These provide companies with benefits of saving money on model creation and user changing many parameters throughout vehicles as soon possible. In this study, engine powertrain energy losses 4-stroke gasoline passenger car were investigated FTP75 (Federal Test Procedure), HFET (Highway Fuel Economy Test), US0...

Journal: :Indonesian Journal of Electrical Engineering and Computer Science 2022

In this paper, the author presents design and implementation of an Sband transmitter for nanosatellites. By combining heterostructure field effect transistors (HFET) laterally diffused metal–oxide–semiconductor (LDMOS) technology using flexible structure control method, research obtained 60 dB gain power when input is -14 dBm, output 46 dBm (more than 25 W) in 2,1 GHz -2,3 Ghz frequency; phase ...

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