This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si hetero...

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN struc...

In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (...

Bismuth oxide may be a promising battery material due to the high gravimetric (690 mAh g(-1)) and volumetric capacities (6280 mAh cm(-3)). However, this intrinsic merit has been compromised by insufficient Li-storage performance due to poor conductivity and structural integrity. Herein, we engineer a heterostructure composed of bismuth oxide (Bi2O3) and bismuth sulphide (Bi2S3) through sulfuriz...

We designed and successfully fabricated a ZnS/CdS 3D mesoporous heterostructure with a mediating Zn1 xCdxS interface that serves as a charge carrier transport channel for the first time. The H2production rate and the stability of the heterostructure involving two sulfides were dramatically and simultaneously improved by the careful modification of the interface state via a simple post-annealing...

We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in experiments have exhibited large current modulation. Our analysis is based on device simulations i...

We present a study of the surface reactivity of a Pd/Bi2Te3 thin film heterostructure. The topological surface states from Bi2Te3, being delocalized and robust owing to their topological natures, were found to act as an effective electron bath that significantly enhances the surface reactivity of palladium in the presence of two oxidizing agents, oxygen and tellurium respectively, which is cons...

In this paper, we synthesized a novel type II cuprous sulfide (Cu(2)S)-indium sulfide (In(2)S(3)) heterostructure nanocrystals with matchstick-like morphology in pure dodecanethiol. The photovoltaic properties of the heterostructure nanocrystals were investigated based on the blends of the nanocrystals and poly(2-methoxy-5-(2'-ethylhexoxy)-p-phenylenevinylene) (MEH-PPV). In comparison with the ...

Synthesis of ZnO-Ag heterostructure nanoparticles was carried out by a precipitation method with cellulose nanocrystals (CNCs) as a stabilizer for antimicrobial and thermal studies. ZnO-Ag nanoparticles were obtained from various weight percentages of added AgNO₃ relative to Zn precursors for evaluating the best composition with enhanced functional properties. The ZnO-Ag/CNCs samples were chara...