نتایج جستجو برای: heptagon pair defect
تعداد نتایج: 212909 فیلتر نتایج به سال:
Seven-particle scattering amplitudes in planar super-Yang-Mills theory are believed to belong to a special class of generalised polylogarithm functions called heptagon functions. These are functions with physical branch cuts whose symbols may be written in terms of the 42 cluster A-coordinates on Gr(4, 7). Motivated by the success of the hexagon bootstrap programme for constructing six-particle...
Ceriuii dioxide doped with y 3 + ions, which is of interest for its ionic conductivity, is here studied by anelastic ~~~ethods. The internal friction peaks observed are analyzed intc peals A , B, C (with Hr = 0.64, 0.71 and 0.78 eV, respectively). Peak A, present at low y3+ concentrations is established to be due to a W pair (V = oxygen-ion vacancy), which is a charged defect conpensated by an ...
In an urban-transit bus, fueled by biodiesel in Toledo, Ohio, single inhalable particle samples in October 2008 were collected and detected by scanning electron microscopy and energy dispersive X-ray spectrometry (SEM/EDS). Particle size analysis found bimodal distribution at 0.2 and 0.5 microm. The particle morphology was characterized by 14 different shape clusters: square, pentagon, hexagon,...
The feasibility of employing azulene-like molecules as a new type of high performance substitution-free molecular rectifier has been explored using NEGF-DFT calculation. The electronic transport behaviors of metal-molecule-metal junctions consisting of various azulene-like dithiol molecules are investigated, which reveals that the azulene-like molecules exhibit high conductance and bias-depende...
2014 The atomic configuration of the EL2 defect in its stable state has been determined as an arsenic antisite defect associated with an arsenic interstitial at a next nearest neighbour site. The metastable EL2 state is tentatively assigned to an arsenic pair defect at a gallium lattice site (As-As )Ga. Revue Phys. Appl. 23 (1988) 803-807 MAI 1988, Classification Physics Abstracts 61.70 71.55 7...
We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for...
Here we continue our previous exploratory work [Huhtala et al., Comput. Phys. Commun. 146 (2002) 30] in investigating carbon nanotube structures under different bending strain conditions by using large-scale molecular dynamics simulations. On the one hand bending strain is obtained by forcing nanotubes of different chirality to a closed toroidal configuration and on the other hand by bending a ...
2014 A critical discussion of the experimental observations made on the EL2 defect in GaAs is made which allows us to conclude that the most probable configuration of this defect is the As antisite-As interstitial pair. Revue Phys. Appl. 23 (1988) 863-869 MAI 1988,
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