The influence of 6 MeV electron irradiation on the electrical properties of Al/Al2O3/n-Si metal–oxide– semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al2O3/n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated...

This paper is an attempt to synthesize nanostructured tantalum films on medical grade AISI 316L stainless steel (SS) using pulsed DC plasma assisted chemical vapor deposition (PACVD). The impact of duty cycle (17-33%) and total pressure (3-10 torr) were studied using field emission scanning electron microscopy (FESEM), grazing incidence x-ray diffraction (GIXRD), nuclear reaction analysis (NRA)...

In this study, thin layers of titanium nitride (TiN) were deposited on H13 steel substrates at different duty cycles and temperature of 520 ˚C using plasma assisted chemical vapor deposition (PACVD). Uniaxial residual stress was calculated by X-ray diffraction (XRD) and Sin2 Ψ method. Then the residual stress of the samples were measured by Grazing Incidence X-ray Diffraction (GIXRD) method and...

AIN thin films were grown by ion beam sputter deposition in reactive assistance of N+/N2+ ions on Si (100) substrates. During deposition, assisted energy (EA) was varied as 90 eV and 120 with a post exposure to N2 plasma. The resultant characterized grazing incidence x-ray diffraction (GIXRD) for their structure atomic force microscopy (AFM) root mean square (rms) surface roughness (δ). UV-VIS ...

In this study, the effect of electrochemical hydrogen charging on corrosion behavior an as-cast Mg–8%Li alloy was investigated. It revealed that after being cathodically charged in a 0.1 M NaCl solution at constant current density 50 mA/cm2 for 3 h, product film with average thickness 20 μm formed α-Mg phase, whilst β-Li phase 6 μm. When time prolonged to 18 thicknesses films and phases were in...

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphizat...

Incorporation of Mo into pure WO3 thin films is interest for electrochromic devices, as it improves colour neutrality in the dark state. Existing literature still lacks reliable quantitative data on complex dielectric function such coatings. In this study, we deposited and MoxW1?xO3 by magnetron sputtering subsequently characterised them X-ray photoelectron spectrometry (XPS), grazing incidence...

Wide band-gap kesterite-based solar cells are very attractive to be used for tandem devices as well semi-transparent photovoltaic cells. Here, Cu2ZnGe(S,Se)4 (CZGSSe) thin films have been grown by sulfurization of co-evaporated Cu2ZnGeSe4. The influence a NaF precursor layer and Se capping film on CZGSSe absorbers has investigated. It found that the distribution [S]/([S]+[Se]) through absorber ...