Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V...

Actual evapotranspiration (ET) is a major water use flux in a basin water balance with crucial significance for water resources management and planning. Mapping ET with good accuracy has been the subject of ongoing research. Such mapping is even more challenging in heterogeneous and data-scarce regions. The main objective of our research is to estimate ET using daily Moderate Resolution Imaging...

A novel and facile synthetic method for h-BN films from borazine oligomer (B3N3H4)x precursors has been developed. This method only includes spin-coating of borazine oligomer onto nickel catalysts and a subsequent annealing step. Large areal and highly crystalline h-BN films were obtained. The stoichiometric B/N ratio of borazine oligomer precursor was preserved in the final h-BN product such t...

This work proposes a novel geometry field effect transistor with graphene as a channel-graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are used for direct current (DC) biasing, whereas their capacitive extension reduces access region le...

Low-cost and low thermal budget-based spin-coated sol–gel Alumina was explored as a dielectric/passivation layer for graphene field effect transistor (GFET). Post annealing, the crack observed in exactly above channel. The possible mechanism of could be lateral restoring movement due to (i) Thermal Expansion Coefficient (TEC) difference between adjacent layers (ii) shrinkage stress generated du...

Abstract The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets charge neutrality condition in channel, thus resulting minimum conductivity. Controlling its dependence on terminal biases is crucial design and optimization radio-frequency applications based multiple GFETs. However, previous analysis such carried out single devices uncomplete if not prop...